| PART |
Description |
Maker |
| STW48N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| STF28N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| SSF8N60 |
Extremely high dv/dt capability
|
Silikron Semiconductor ...
|
| FDG316P |
High performance trench technology for extremely low
|
TY Semiconductor Co., Ltd
|
| FDG330P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., L...
|
| CES2313 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2313A |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2312 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| AMS2301A |
Super high density cell design for extremely low
|
Advanced Monolithic Systems Ltd
|
| FDC6312P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CZT2000 |
PNP Silicon Extremely High Voltage Darlington Transistor
|
Guangdong Kexin Industrial Co.,Ltd
|
